Study of Direct Current and Dynamic Characteristics on High Current GaN Field Effect Transistors
| Autor: | Wei-kai Shen, 沈煒凱 |
|---|---|
| Rok vydání: | 2013 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 101 This thesis focuses on the fabrication of high current GaN transistors and the influence of different gate insulator materials on the single finger devices. In order to achieve high current transistors, this study designed the multi-finger type layout with the total gate width of 20 mm. High current AlGaN/GaN MISFETs grown on 6” Si substrate were successfully demonstrated. When the device is under gate bias of 0 V, drain bias of 10 V and pulse width of 200 μs, the maximum current and specific on-state resistance (Ron) reached 8.3 A and 3.6 mΩ-cm2, respectively. In addition, the measured dynamic Ron is about 1.67 times magnitude of the static Ron. This study designed a variety of gate insulator materials, including Al2O3、SiO2、Si3N4 and SiO2/Al2O3 composite layer, and found out that the devices with Al2O3 and Si3N4 gate insulator had lower Ron of 3.4 mΩ-cm2 and 3.1 mΩ-cm2. In the off-state characteristics, the devices with SiO2 and SiO2/Al2O3 composite layer have higher breakdown voltage over 200 V, while the other two devices have the problem of early breakdown. In addition, devices with different insulators have different performances on the dynamic Ron. By C-V measurement, the density of deep level trap between insulator and semiconductor could be obtained to analyze the difference of dynamic characteristics. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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