Effects Of Silver Nanowires And Carbon Nanotubes On ZnO Thin Films
| Autor: | Chang, Chihcheng, 張志誠 |
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| Rok vydání: | 2012 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 100 In this study, we reported on the micro-structural, transparent and heat shielding, and dielectric properties of AgNWs-doped and MWCNTs-doped ZnO thin films prepared by sol-gel method. The doping amounts of AgNWs or MWCNTs have strong influence on the properties of the ZnO thin films. The thin films were dried at a constant temperature of 200 ℃ for 10 minutes and then sintered at a constant temperature of 275 ℃ for 2.5 hours. As the concentration of undoped ZnO thin films increases from 0.5 M to 0.9 M, the surface average roughness (Ra) and the NIR shielding increase, but the visible transparency decreases. The 0.5 M undoped ZnO film exhibits the lowest Ra of 33.24 nm. All the undoped ZnO thin films exhibit the NIR shielding below 10 % and exhibit the visible transparency above 80 %. As the doping amounts of AgNWs and the concentrations of ZnO films increase, the Ra and the NIR shielding increase, but the visible transparency decreases. The 0.5 M ZnO thin film doped with molar ratio of 1/50 of AgNWs exhibits the lowest Ra of 42.88 nm. The AgNWs-doped ZnO thin films exhibit the NIR shielding in the range of 10-40 % and the visible transparency in the range of 40-90 %. As the doping amounts of MWCNTs and the concentrations of ZnO films increase, the Ra and the NIR shielding increase, but the visible transparency decreases. The 0.5 M ZnO thin film doped with molar ratio of 1/50 of MWCNTs exhibits the lowest Ra of 30.94 nm. The MWCNTs-doped ZnO thin films exhibit the NIR shielding in the range of 15-95 % and the visible transparency in the range of 5-85 %. The dielectric constant increases and the dielectric loss decreases with increasing undoped ZnO concentration up to 0.9 M at room temperature. The undoped 0.9 M ZnO thin film exhibits the largest dielectric constant of 1564.82 and the lowest dielectric loss of 0.86 at 10 MHz. The 0.9 M ZnO thin film doped with molar ratio of 1/50 of AgNWs exhibits the highest dielectric constant of 1010.3 and the lowest dielectric loss of 2.26. The 0.9 M ZnO thin film doped with molar ratio of 1/10 of MWCNTs exhibits the highest dielectric constant of 4017.21 and the lowest dielectric loss of 0.93. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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