Preparation and Properties of AZO Sputtering Target
| Autor: | Yu Hsiang Su, 蘇毓翔 |
|---|---|
| Rok vydání: | 2012 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 100 The alternatives to ITO are extensively developed in academia and industry recently. Aluminum-doped zinc oxide (AZO) is regarded as the potential substitute for ITO, due to its versatility. Unfortunately, most researches focused on the effects of, The influences of sputtering targets on the performances of films sputtered are rarely highlighted. Furthermore, the correlation between the target properties and film performance and how to prepare high-quality sputtering targets have been neglected. Thus, this study investigated the effects of sintering temperatures on the densification, microstructure, and electrical properties of AZO target. To correlate the properties of AZO targets and films, the properties of AZO targets was also compared with those of AZO films in the literatures. The results showed that the 2wt% Al2O3 additive in ZnO resulted in higher sintered density, finer grain size, and better electrical properties. When the sintering temperatures was higher than 1000℃, ZnAl2O4 spinel precipitates will form and inhibit the grain growth and promote the densification. The sintered densities of AZO were improved with increasing the sintering temperature. After 1500℃ sintering, the highest sintered density of AZO target achieved was 98.8%. Both the carrier concentration and Hall mobility of AZO targets were improved with increasing the sintering temperature. The resisitivity was imporved to 1.93×10-3Ωcm after 1500℃ sintering. Furthermore, The comparison between the properties of AZO targets and AZO films indicated that AZO targets exhibit higher Hall mobility and lower carrierconcentration than AZO films do, though their resistivities are similar. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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