Study of Dry PR Stripping Uniformity by The Gas Distribution Plate

Autor: Shao-Chi Wang, 王少棋
Druh dokumentu: 學位論文 ; thesis
Popis: 100
Dry photoresist stripping process as dry etching process requirements due to its lower selectivity and over etching may result in plasma damage to under layer material so precise control uniformity is required for dry process. This research is to improvement of dry PR stripping uniformity for the gas distribution plate by the dry PR stripping process equipment using 300mm wafer photoresist coating 30000Å. Gas distribution plate ( Baffle ) specification stomata chamfer size between 0.35mm to 0.25mm. The experimental results can be etching uniformity by 8-11% of the performance dropped to 7-8% and to verify the uniformity improve with the yield performance. The yield by using 45nm and 65nm components are about 85%. Designed to improvement of dry PR stripping uniformity for asymmetry of the gas distribution plate and the experimental results can be improved by the uniformity 8-11% to 4-6% and to verify the relation between uniformity and yield improvement. The yield by using 45nm and 65nm components can be improved about 1%.
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