Investigation of AlGaN/AlN/GaN High Electron Mobility Transistors With MOS-gate Structure by Using Ozone Water Oxidation Technique
| Autor: | Lung-Yi Tseng, 曾隆鎰 |
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| Rok vydání: | 2012 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 100 In this thesis, AlGaN/AlN/GaN high electron mobility transistors (HEMT) using ozone water treatment. As a surface passivation layer and metal-oxide-semiconductor HEMTs (MOS-HEMT) using ozone water as gate oxide have been investigated and compared with the conventional HEMT. The present devices with the ozone oxidation gate dielectric were also used for passivation simultaneously. Our measurements have shown that conventional HEMTs and with oxide passivation HEMTs outperformed the MOS-HEMTs in DC and microwave characteristics: the saturation drain current density IDSS0 (538.2 mA/mm and 701.4 mA/mm), the maximum extrinsic transconductance gm,max (124.2 mS/mm and 167.3 mS/mm), the ID,max (646 mA/mm and 927.9 mA/mm), the voltage gain AV (159.80 and 211.77), the unity current gain cut-off frequency fT (11 GHz and 16.8 GHz), the maximum oscillation frequency fmax (14 GHz and 18.8 GHz), and the power-added-efficiency (P.A.E.) (27.4 % and 32.2 %), respectively. From the experiment results, we have successfully improve current, thermal stability, output power, high frequency and reliability stability by use ozone water treatment. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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