Fabrication Study of Undoped and Si-doped AlN Thin Films Prepared by Helicon Sputtering Method
| Autor: | Hong-Xiu Chen, 陳弘修 |
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| Rok vydání: | 2012 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 100 Our research group has studied AlN thin films for a long time. The thin film growth, as well as the optoelectronic device applications, of AlN has been developed in the past. However, for more applications of AlN thin films, such as high power devices or deep UV optoelectronic devices, to enhance the quality and increase the conductivity of the AlN films have become inevitable issues. The quality of AlN films have been improved and optimized by adjusting the growth parameters. The crystallinity of the films were characterized by XRD and HRTEM. The dislocation density of AlN films prepared at 500 °C is estimated from the FWHM results of ω-scan. It was found that the screw dislocation density is 9.49×109 cm-2, and the edge dislocation density is 2.07×1011 cm- 2. In this thesis, Si wafer attached on Al metal target was employed to obtain Si-doped AlN films. From EDS and SIMS results, it was found that the Si dopant concentration can be controlled by changing the area of Si on Al target. Minimum resistance of 3.05×109 Ω was obtained by using 1.2 cm silicon wafer on Al target, while 4.51×109 Ω was obtained for using 1.6 cm silicon wafer attached on Al. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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