Luminescence properties of porous anodic alumina on Si substrates with metal interlayers
| Autor: | Jack Huang, 黃志遠 |
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| Rok vydání: | 2012 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 100 Porous anodic alumina (PAA) film which produced by the anodization technique has a nano-scale porous structure in mass production and the pore height and diameter are controllable. This work aims to study effect of current density on luminescence properties of porous anodic alumina. Metal interlayer was observed to have significant influences on porous anodic alumina. We used highly pure Al film (about 2.0 μm) which was deposited on the p-type silicon substrate and coated with a Ti and W metal interlayer (about 300 nm) by radio frequency sputtering. The anodization was carried out in 0.3 M oxalic acid solution at 5 °C temperature, 40 V for about 50 nm pores in diameter. A layer of thin Ti and W film was sandwiched between a silicon substrate and an Al film to form the Al/Ti/Si and Al/W/Si structure. Current–time (I–t) curve was obtained on a recorder. The PAA/Ti/Si and PAA/W/Si had current density higher than AAO/Si. Further studies into the growth kinetics of porous layers which formed by anodization in oxalic acid under galvanostatic conditions have shown that the rate of growth of the oxide layer increases with increasing current density. From the XRD experiment consequence can discover that PAA of higher current density have more Aluminum oxide in the inside different substance structure. Besides, we get the consequence from analyzing PL experiment when a current density rise, the PL intensity of F+ center getting increase and that because during re-crystallize, oxygen will make up the oxygen vacancy of Aluminum oxide’s inside and reduce F+ defect. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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