Microwave V-band Power Amplifier and Mixer Design
| Autor: | Chou, Min-Li, 周旻立 |
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| Rok vydání: | 2012 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 100 The circuits of power amplifier and mixer applied for V-band communications have been designed and fabricated by using GaAs 0.15 μm pHEMT and 90 nm CMOS technologies in this thesis. The circuit design is expected to achieve high gain and high output power performance. The design of power amplifier (PA), for achieving high output power and broadband characteristics, is based on a balance circuit topology. To further reduce the layout area for the coupler design, the three-dimensional of vertical coupling mode was used in the PA circuit. The circuit exhibits the small-signal gain is 13.0 dB with 3-dB bandwidth between 54.4 GHz and 65.7 GHz. The maximum output power and P1dB are 18.6 dBm and 15.9 dBm respectively at an input power 3.5 dBm. The maximum PAE also can achieve to 13.6 %. Because of a design fault of DC feeding and RF bypassing, the measured results is out of expectancy. For achieving the performances of high conversion gain, high noise suppression, and high isolation for the V-band mixer, the circuit topology is chosen based on a Gilbert cell structure, which is operated with radio frequency (RF) of 60 GHz and intermediate frequency (IF) of 1 GHz. The broadband baluns providing a single-to-differential signal transformation to RF and LO ports are designed around the mixer core for layout size reduction. The mixer exhibits a conversion gain of 3.8 dB and a RF bandwidth over 10 GHz in the simulation. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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