The fill factor characteristic research of amorphous silicon solar cell

Autor: Po-Hong Lin, 林博鴻
Rok vydání: 2011
Druh dokumentu: 學位論文 ; thesis
Popis: 99
The energy crisis causes the development of renewable energy to replace the rock oil energy. The solar energy is a distinguished renewable energy because it is in great demand at present. In a wide variety of solar cells, as a-Si solar cells with low material cost and high transmittance advantage. In this study, the pin single junction amorphous silicon solar cell were fabricated by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD), and the metal electrode (Ag or AZO/Ag) were fabricated by In Line Sputter. The different device structure and process technology on performance of amorphous silicon solar cells were investigated. The effect of IV curve in ASAHI U-type/p-a-SiC:H/buffer layer/i-a-Si:H/n-a-Si:H/Ag solar cell structures were discussed in this study. Using the characteristics of the In Line Sputter,we can find that Jsc and FF increased when 1Run to 4Run, and reached a maximum efficiency at 4Run with Voc = 0.85 V, Jsc = 14.23 mA/cm2, FF = 61.8% and η = 7.48%. A back double electrodes with AZO/Ag was deposted. The result, RF power = 800W, the AZO 180 nm thick shows the Voc = 0.837 V, Jsc = 14.93 mA/cm2, FF = 68.4% and η = 8.54%. The ASAHI U-type/p-layer can be improve by H2 plasma treatment or insert front AZO. We can obtained the Voc = 0.837 V, Jsc = 15.14 mA/cm2, FF = 65.6% and η = 8.31% when the H2 plasma(10s). In addition, AZO 10 nm thick with the Voc = 0.82 V, Jsc = 15.78 mA/cm2, FF = 66.2% and η = 8.56%. Finally, the cells were annealed to improve the contact between silicon and metal electrode to increase the FF and conversion efficiency of thin film solar cells. After post annealing at 120˚C for 120 minute, the optimized single junction a-Si:H solar cell with back AZO was ASAHI U-type/p-a-SiC:H/buffer layer/i-a-Si:H/n-a-Si:H/AZO/Ag, the Voc = 0.85 V, Jsc = 15.12 mA/cm2, FF = 70.69% and η = 9.08%; H2 plasma treatment(10s), the Voc = 0.82 V, Jsc = 16.11 mA/cm2, FF = 66.7% and η = 8.81%; insert front AZO 10 nm thick, the Voc = 0.83 V, Jsc = 16.05 mA/cm2, FF = 67.2% and η = 8.95%. It can be also concluded that after post annealing of AZO/Ag is beneficial for improving fill factor and conversion efficiency.
Databáze: Networked Digital Library of Theses & Dissertations
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