Conduction type and behavior of Mg-doped In2O3 films
| Autor: | Mei-Chuan Cheng, 鄭美娟 |
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| Rok vydání: | 2011 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 99 This study investigates the effect of Mg content on the optical and electrical properties of sol-gel Mg-doped In2O3 films. In terms of the atomic concentration ratio of Mg/In (m=[Mg]/[In]), there were four samples, including m=0% from sample A, m=5% from sample B, m=18% from sample C, and m=33% from sample D. Mg-doped In2O3 thin films have high transparency and wide band gap. It is shown that transformation from n to p type for sample D may be due to a combined effect of the adsorption of H2O and the decreased oxygen-vacancy density. In addition, poor rectifying junctions are formed on n-type ZnO by employing the simple technique of spin-coating sample D to act as the electron-blocking layer. The electrode independence of the barrier heights according to the thermionic field emission model for sample D/n-type ZnO devices could be attributed to the presence of the Fermi level pinning. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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