Exploration of the Hafnium Oxide Films Grown by Thermal Oxidation
| Autor: | Yang, Shangkang, 楊尚剛 |
|---|---|
| Rok vydání: | 2011 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 99 In this thesis, hafnium was using thermal oxidation to the preparation of metal oxide for the rare earth element hafnium metal. Hafnium metal was deposited on silicon wafer by E-Gun and then proceeded with thermal oxidation in high temperature furnace tube for various oxidation temperature (600℃~900℃).The Capacitance-voltage (C-V) characteristic curve was measured by LCR Meter (1 MHz) high-frequency range and calculated for each sample of the oxide dielectric constant (ε) are greater than 25.By the instrument HP4156C measurements when the bias is -1V, the samples leakage current density are less than 10-7 A/cm2 and the breakdown field strength are more than 9 MV/cm. The greater thickness of oxide film was obtained for the longer oxidation temperature by the transmission electron microscopy (TEM) measurement. The surface morphology of hafnium oxide films was measured by atomic force microscope (AFM). From the macro point of view, the grown oxide films of which thickness, surface roughness (Ra) vary with oxidation temperature. The crystal structure, showing tetrahedral shape into six-sided cone (Hexahedron) extent that octahedral pyramid (Octahedron), the nuclei of hafnium oxide started growing from the bottom (substrate surface) and gradually stacking up into a taper, there are similarities between the present pattern after rolling through the taper tip, the measure on surface of the oxidation films by Nanoscope III. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
|