Deposition of Hydrophobic Thin Film by Low-Pressure CH2F2 Plasma Process
| Autor: | Chien-Hsuan Pan, 潘建瑄 |
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| Rok vydání: | 2010 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 98 In an attempt to perform hydrophobic nano-coating, low-pressure plasma chemical vapor deposition technique was employed to deposit fluorocarbon thin film on silicon wafer substrates in this study. We also deposited films on different substrates for various industrial applications. The low-pressure plasma was generated with radio frequency power at 13.56 MHz, and difluoromethane (CH2F2) was utilized as the monomer. The investigation examined different operational parameters including in RF plasma power, system pressure, and ratio of the monomer to gas. The surface characteristics of the plasma polymerized films have been analyzed by contact static angle measurement (CA), optical thin-film thickness detector, atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), and X-ray photoelectron spectroscopy (XPS). Moreover, optical emission spectrometry (OES) was used for detecting the luminous gas phase of the low-pressure plasma chemical vapor deposition. As a result, increasing deposition thickness of CH2F¬2 plasma polymerized films was achieved in rising RF plasma power. The effects of CH2F2/Ar plasma on the surface characteristics of the plasma polymerized films were investigated as a function of the Ar content. The super-hydrophobic coating under optimized operational parameters prepared in this study obtained water contact angles greater than 150°. In addition, AFM analysis shows that possible ion bombardment from CH2F2/Ar plasma can increase surface roughness. The influence of surface roughness on hydrophobic property plays a significant role in this study. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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