Improvement in Ultra-thin Oxide Quality by Tensile-Stress Anodization Technique and Vacuum AnnealTreatment
| Autor: | Yu-Jen Lee, 李祐任 |
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| Rok vydání: | 2010 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 98 Because of the progress of the technology of semiconductor and the Moore’s law, the size of devices is scaling down at every moment. The equivalent oxide thickness (EOT) will be 7.5Å in 2012 according to the expectation of ITRS. In this moment, the quantum mechanical effect will be noticeable, and thus the leakage current will be exceedingly high. Therefore, method to solve this problem should be necessary. The high-κ material is one of promising candidates to replace the SiO2 as gate oxide, but there are still many problems of high-κ material to be solved. Hence, improving the quality of gate oxide of SiO2 will be required in near future. In this thesis, applying tensile stress on silicon wafer during oxidation is proposed to modify the lattice mismatch, and hence promoting the properties of MOS device. Besides, there may be residual oxidants left in the oxide after anodization due to incomplete reaction, and thus they may degrade the oxide quality. Therefore, we try to reduce the residual oxidants in the oxide by vacuum anneal treatment, and then improving the oxide quality. From the experimental results, the electrical properties and reliabilities of the tensile-stress gate oxides are superior to the non-stress gate oxides. On the other hand, the oxide quality and uniformity would be further improved by vacuum anneal treatment. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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