Study of Oxide Traps among Gold Nano-Particles in Metal-Oxide-Semiconductor Device
| Autor: | Hong-Cheng Huang, 黃虹彰 |
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| Rok vydání: | 2010 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 98 In this work, Metal-Oxide-Semiconductor structure with Au nanocrystals formed by chemical redundant method for charge storage is fabricated. Scanning Electron Microscope is utilized to calculate the density of nanocrystals. In the characterization of memory performance, we use high frequency capacitance-voltage (C-V) measurement to measure the memory window size for comparing the storage capacity and charging efficiency. On the other hand, through the time dependent variation of device capacitance measured under fixed voltage, the effective charge loss rate can be calculated to compare the retention regarding the stored charge of devices. In the study of device, we compared the impacts between different structural parameters at first, include using gold nanoparticles and silver nanoparticles, and the variance of different diameters of gold nanoparticles, such as 10 nanometer and 20 nanometer. When the density of the gold nanoparticles increased also has influence that charge retention dropping while causing the memory window size increasing. Further, we want to improve the performance of device in addition, using excimer laser annealing to fix the defects in oxide layer, but we find the gold nanoparticles would be melted after heated by laser, and diffused into oxide layer then break down under the bias voltage. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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