Preparation and Diffusion Barrier Property of AlCrTaTiZrRu High-Entropy-Alloy Nitride Films
| Autor: | Chen-Yuan Wang, 王振元 |
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| Rok vydání: | 2010 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 98 As the line width and spacing of intergrated circuits (ICs) continually decrease, copper has been widely used as an interconnect material because of its lower electrical resistivity and better electromigration resistance. To inhibit rapid copper diffusion in interconnect structures, an effective diffusion barrier layer with high thermal stability, low electrical resistivity and good interface adhesion is demanded. In this study, an AlCrTaTiZrRu senary high-entropy alloy (HEA) and its nitride (HEAN) films were deposited by reactive radio-frequency magnetron sputtering in an Ar+N2 mixed atmosphere. The N2 flow ratio (N2/(Ar+N2)) was set as 0%, 10% and 30% to obtain HEA, HEAN0.06 and HEAN0.5 films respectively. All the thickness of the barrier films were set as 5 nm. Barrier properties were examined by annealing the structure over a temperature range of 700 to 900℃ for 30 min. From the analyses of diffusion behaviors, it was found that the electrical resistance of Si/HEA/Cu、Si/HEAN0.06/Cu and Si/HEAN0.5/Cu film stacks remained at a low level after annealing at 800℃, implying the good diffusion resistance of the HEA、HEAN0.06 and HEAN0.5. At the temperature up to 900℃, a Cu3Si crystalline phase appeared, and the electrical resistance obviously increased, indicating the failure of the barrier HEA、HEAN0.06 and HEAN0.5 as diffusion barriers. In addition, the HEA film especially has the high potential for the future IC development because of its lower resistivity (246 μΩ-cm) and amorphous structure. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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