Study on the Adjustable Stress of Plasma Enhanced Chemical Vapor Deposition Film by Ion Implantation
| Autor: | Ming-Hong Xiao, 蕭名宏 |
|---|---|
| Rok vydání: | 2010 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 98 The objective of this present work is to use ion implantation to adjust stress of plasma enhanced chemical vapor deposition (PECVD) film. The two-dimension suspended structure was design to observe the deformation of membrane. Furthermore, the two-dimension structures were modified with three-dimension structures to fabricate concave and convex structure. The membrane material includes PECVD silane oxide, PECVD TEOS oxide and PECVD nitride. The parameters of ion implantation were ion species, energy and dose. The experiment results show that the residual stress of the PECVD silane oxide, PECVD TEOS oxide and PECVD nitride can be adjusted to the range of -98~30MPa, -300~-120MPa and 300~-22MPa, respectivly. In this study the concave structure and convex structure were simulated by ANSYS and fabricated successfully. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
|