The Fabrication of High Power AlGaN/GaN HEMTs With The Flip-Chip Technology
| Autor: | Shu Liang Lin, 林書良 |
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| Rok vydání: | 2010 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 98 AlGaN/GaN heterostructure high electron mobility transistors (HEMTs) have great potential in high frequency and high power application. But when AlGaN/GaN HEMTs operate at high power condition, the excess heat of the HEMT devices will to limit their output power. At the meantime, the problem of heat sinking will become a hindrance of rising power. Therefore, the Flip-Chip technology is proposed by us to solve the heat-sinking problem in order to achieve the goal of rising the AlGaN/GaN HEMT’s power. In the other part, the Electrostatic Discharge (ESD) immunity ability is also the subject we pay close attention to. The failure which ESD caused is still a series issue for semiconductor device, and the arid environment especially. In this thesis, we hope the flip chip AlGaN/GaN HEMT device can solve the problem of heat-sinking and have the ESD immunity ability at the same time. So making the Metal-Insulator-Metal (MIM) capacitance structure on the AlN submount is proposed to improve the ESD immunity and the heat-sinking problem. Finally, the power enhancement and the ESD enhancement capable of the HEMT devices are studied and detailed in this thesis. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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