Investigation of Low Temperature Atmospheric Pressure Plasma Deposited SiOx Thin Films
| Autor: | Shin-Yi Wu, 吳信誼 |
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| Rok vydání: | 2009 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 97 In this study, atmospheric pressure plasma chemical vapor deposition (APPCVD) technique was employed to deposit SiOx thin film on Polycarbonate (PC) substrates. We anticipate improving the surface properties of plastic substrates. Hexamethyldisilazane (HMDSN) and Hexamethyldisiloxane (HMDSO) were utilized as the precursor for APPCVD. Atmospheric pressure plasma deposited SiOx thin films have been analyzed by the optical thin-film thickness detector, FTIR, XPS, AFM, and UV-VIS. With various operational parameters including in RF plasma power level, the distance of nozzle to substrate, oxygen gas flow rate, APP deposited SiOx thin films have been investigated for the change of surface properties and chemical composition. Moreover, Optical Emission Spectrometry (OES) was used for analysis the luminous gas phase of APPCVD process. The experimental results determined that the oxygen gas flow rate is the key point of APPCVD process. Depending on the proper operational parameters, SiOx thin film has excellent inorganic features. The hardness of atmospheric pressure plasma deposited PC substrates was improved from 6B to H, and obtains a transmission of 93 % in the visible region. Atmospheric pressure plasma surface modification technique was employed to improve adhesion between SiOx thin film and PC substrate. After atmospheric pressure plasma surface modification, the adhesion of plasma modified PC substrate is improved from 0B (percent area removed＞65 %) to 5B (none area removed). |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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