Residual Stress Extraction Based on CMOS Standard Process
| Autor: | Liu, Yu-Chih, 劉育智 |
|---|---|
| Rok vydání: | 2009 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 97 Recently, using CMOS(complementary metal oxide semiconductor) standard process fabricates MEMS (Micro-electromechanical System) device has been popularly. Integrating CMOS with MEMS can reduce the area of device, batch production and decrease the cost of production. However, the residual stress of thin film caused structure unpredictable deformation. Therefore, it is necessary to know residual stress of CMOS standard process thin film for designer. This study design a number of cantilever structures according to CMOS design rules. These cantilever structures are deposited by different thin film. The residual stress of thin film caused the cantilever structures out-of-plane deformation. According to appropriate analytical method, the curvature of each cantilever structures can be predicted and the residual stress of CMOS standard process thin film can be extracted. Eventually, we can build up database of CMOS standard process thin film residual stress. The database can provides reference for designer that want to use CMOS standard process. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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