Fabrication and analysis of a novel GaN Schottky Diodes
| Autor: | Ying-chien Chen, 陳英杰 |
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| Rok vydání: | 2009 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 97 In this thesis a new AlGaN/GaN high electron mobility transistor basedrectifier, i.e. P-field effect Schottky barrier diode (P-FESBD), is proposed andfabricated. It consists of a p-n diode and a Schottky diode connected in parallel.With the additional p-type GaN gate, the rectifier is expected to operate in the normally-off mode with low reverse leakage current and low on-resistance. The turn-on voltage, on-state resistance and breakdown voltage of the one finger rectifier with 500×35 μm2 gate area is 0.5 V, 24 mΩ-cm2 and 22 V, respectively. According to secondary ion mass spectroscopy measurement and electrical characterization, diffusion of the p-type dopant, Mg, and leakage current of the GaN buffer layer are concluded to be the main reasons for poor breakdown voltage. Furthermore, in order to increase the forward current and yield of GaN Schottky diodes with multi-finger or large gate area, tested Schottky diodes are connected in parallel by wire bonding. Forward current of 432 mA at 1.5 V is achieved on a six-diode device with 160 V breakdown voltage. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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