Studies on Electrical Properties and Terahertz Absorption Spectrum of p-Ge under uniaxial stress
| Autor: | Lee, Chih-Haw, 李志浩 |
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| Rok vydání: | 2009 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 97 In this study, we measured the I-V and absorption characteristics of strained Ge:Ga samples at cryogenic temperature (10 K). As the stress increases along the [100] and [110] direction, the breakdown voltage increases to a maximum around 0.5-1 kBar and then decreases. The absorption spectra show that the energy differences between the ground states and the excited states also increase to a maximum then decrease in the same stress region. According to these results, we can propose a mechanism to explain the stress dependence of breakdown voltage. Our experiment is in agreement with the theoretical predictions. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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