MOCVD Growth of Non-polar GaN Based Light Emitting Devices and Functional Nanostructures
| Autor: | Te-Chung Wang, 王德忠 |
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| Rok vydání: | 2008 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 97 In this dissertation, the improvement in operation performance of III-V optoelectronic semiconductor light emitting devices and fundamental materials characteristics, which include invisible ultraviolet (UV) light-emitting diode (LED), red emission InGaN multiple quantum dots (MQDs) layers, non-polar a-plane GaN on r-plane sapphire substrate, internal quantum efficiency (IQE) behavior and LED characteristics between c-plane and a-plane multiple quantum well (MQW) were studied. The content include those key technologies for semiconductor light emitting devices to possess better output performance and high operation stabilities are the epitaxial crystal quality and the design of epitaxial structure. Moreover, several important issues including evaluating of device junction temperature, internal quantum efficiency, and piezoelectric field elimination all are discussed by theoretical forecast and experimental analysis. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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