Study of Wafer Bonding Technology Applied to Optoelectronic Devices
| Autor: | Wei-Chun Tseng, 曾煒竣 |
|---|---|
| Rok vydání: | 2009 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 97 This thesis aims at applying Gold-Indium (Au/In) eutectic wafer bonding techniques for the research of III/V compound materials, including the fabrication of Gallium-Arsenic (GaAs) solar cells and measurement of metal-semiconductor contact features in crystal polarity surfaces of Gallium-Nitride (GaN) materials. By the fabrication process of wafer bonding, the metal reflection mirror is applied to the rear side of Gallium-Arsenic solar cell devices to further reflect the residual parts from front incident photons. In the conditions at wavelength of 800 nm, the reflectance of Ti and Ag are 44% and 88%, respectively. The photocurrent density (JSC) for Ag mirror devices is enhanced by 5.3% as compared to Ti mirror cells. The contact characteristics of overturned GaN epitaxy in N-face is also studied. The Cr/Au alloy, under N2 ambient at 250℃ for 5 minutes, for the N-face n-GaN shows Ohmic characteristics while the doping level is 1×1019 cm-3.experienceOhmic However, the contact becomes Schottky characteristics when the alloy temperature is above 300℃ or longer alloy time (>5 min). In addition, the specific contact resistance (ρc) of both N-face and Ga-face could be reduced by cleaning wafer surfaces of HCl aqua solutions. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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