A Research on the Fabrication of LTPS by the MIC method for the solar cell Applications
| Autor: | Shih-Jie Wei, 魏士傑 |
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| Rok vydání: | 2008 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 96 In this research, the low temperature poly-silicon (LTPS) thin films fabricated by the metal induced crystallization method are of interests for solar cells. The AIC (Aluminum Induced Crystallization) with metal induction or Al rechange methods will be make the non-crystalline silicon change into the type attitude of polycrystalline silicon. These LTPS thin films will be analyzed by the material and electrical measurements to optimize the fabricated processes.The first Solid Phase Crystallization methods will be apllied to the as-deposited a-Si thin film.The secends Aluminum Induced Crystallization methods will be apllied to the as-deposited a-Si thin film. Grow up on the glass and on the SiN thin film that do the discussion separately. Results show the annealing temperature(520°C) and the annealing time(2hr).The lateral grain size observed from SEM graph is about 10~15μm. If bring out AIC grow up it on the SiN thin film. Find its superficial attitude changes and the crystallization crystalline grain is diminished. The poly-si thin film grow up on the SiN thin film. The aluminium atoms remain more phenomena. So influence the mobility and the bulk of the thin film. We study grow up the absorb layer. We grow up and absorb layer it after 900nm. The discovery has not been influenced the crystallization type attitude because of increasing in thickness. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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