Fabrication and Analysis of Indium-Gallium co-doped Zinc Oxide Transparent Conducting Thin Film
| Autor: | Wei-Sheng Hsu, 徐偉盛 |
|---|---|
| Rok vydání: | 2008 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 96 In this thesis, the ultrasonic spray pyrolysis properties was used to fabricate indium-gallium co-doped ZnO thin films to study their optical and electronic .There are two main purposes in our report : (1) explore the effect of In-Ga co-doping on the morphology and physical properties of the films; and (2) studying investigating the post-annealing features in IGZO thin films. The results confirmed that the surface structure of the films will be affected by the doping concentration. The conducting properties reach the best result of when sample grown at 550℃ with doping of 5 at%, resistivity of 44 Ω-cm, and mobility of 25 cm2/Vs. The transmittance is above 80% for the sample in visible light region. After annealing 660℃ for 20 minutes, we get the lowest resistivity of 11.6×10-2 Ω-cm and highest mobility of 21.86cm2/Vs. This result shows that the doping ratio of 5 at.% reveals the best transport properties of In-Ga co-doped ZnO films. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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