Characterization of Erbium-doped ZnO prepared by Ion beam sputtering deposition
| Autor: | Chung-wen Chang, 張仲文 |
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| Rok vydání: | 2008 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 96 Erbium-doped ZnO films were deposited by ion-beam sputtering deposition. Alternate ZnO-Er layers were deposited on Si wafers utilizing individual ZnO and Er targets. This allows the mixing of Er into ZnO matrixes by thermal annealing. Under above bandgap excitation, near-infrared (NIR) emission at 980 nm is observed on annealed samples, which is due to the inner 4f transition of Er3+ from 4I11/2 to 4I15/2. XRD analysis indicates a shift of ZnO (002) peak position to larger angle values, which may due to the incorporation of Er ions into ZnO that causes a reduced interplanner distance along the c-axis which enhances NIR emission intensity. Annealing at 800˚C for 10 minutes in atmospheric environment gives the strongest NIR emission. Annealing temperature higher than 800˚C or annealing time longer than 20 minutes causes the NIR emission to decrease, but annealing in nitrogen atmosphere can restore the NIR emission. In all annealing temperature, the 980 nm emission will arise when the ZnO thickness increased adequacy. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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