Study on Dressing Behaviors in Chemical Mechanical Polishing
| Autor: | Kuen-Ren Chen, 陳鯤仁 |
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| Rok vydání: | 2008 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 96 Chemical mechanical polishing (CMP) is the planarization technology most often used for semiconductor processes. The polishing pad needs to be dressed by a dresser to maintain the stability and the throughput of the planarization process. This study simulated and predicted the pad profile by calculating the distribution of scratch numbers of diamonds against the pad. The effect of the relative velocity between a dresser and a pad has been experimentally verified to be insignificant on dressing rate, so the simulation did not take the effect of relative velocity into account. First, different types of dressers, including ring-types and full-type, different pitches and arrangements, were simulated. Then, the effects of different dressing conditions, rotational speeds, sweep amplitudes and frequencies were examined. A uniformity index was defined to optimize the uniformity of dressing process. The simulated pad profile was then compared to the actual pad profiles and results were very similar. According to the simulation model, users can directly modify the parameters that are adjustable in the equipment and find the optimum dressing condition. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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