The Study of Titanium Oxide Thin Film Prepared by RF Sputtering
| Autor: | I-Han Wu, 吳宜翰 |
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| Rok vydání: | 2008 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 96 This thesis is to study the characteristics of the Titanium Oxide thin films deposited on Silicon Wafer substrate by Radio Frequency magnetron sputtering using Ti target in plasma of Argon and Oxygen mixtures. The experimental parameters are including chamber pressure, oxygen flow ratio, annealing temperature and thickness of titanium layer. The effects of the processing parameters on the crystal structure, surface morphology, chemical composition and other characteristics of titanium oxide thin films were investigated by different oxygen flow ratios, thickness titanium layer on substrate and thermal treatments. The titanium oxide thin films deposited by RF sputtering, will usually formed during the process under the oxygen insufficient condition behave N-type electrical conduction due to the Oxygen vacancy. In this thesis was pre-deposited a Ti layer on substrate before the deposition of the titanium oxide thin films and expect the oxygen vacancy to be occupied by the Ti atoms. The author studied this phenomenon and discussed the effect of Ti layer thickness and vacuum annealing temperature on N and P type semiconducting properties of the titanium oxide thin films. The titanium thin films of different processing recipes were characterized by Hall Effect, XRD and FE-SEM+EDS. The results indicated that the TiO2 films of N and P type are in anatase phase when annealing at 300 ~ 400 degrees. But when the annealing temperature reach 500 degree celsius both of the anatase and rutile phase coexists. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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