Synthesis of Gallium Nitride Nanowires by Chemical Vapor Deposition
| Autor: | Wun-Hao Wu, 吳文豪 |
|---|---|
| Rok vydání: | 2008 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 96 Developments in the field of III-nitride InN, GaN, and AlN semiconductors have been spectacular due to their highly attractive inherent properties. Many review papers and books have been published on the thin films of III-nitride. One dimensional GaN crystals, such as nanowires and nanorods, have been synthesized by many different methods in recent years, the direction and diameter control of GaN nanowires is the key to their synthesis.We report an approach to the synthesis of GaN nanowires on Au/Si substrate through the reaction of Ga2O3 with NH3 gas at growth of temperatures 1000oC (systemⅠ). On the side, owing to Ga vapor pressure is very low (10-3torr at 1000oC), (LiF+Ga) was used as Ga source in the experiment in order to form the GaF vapor source to the CVD growth of 1-D GaN. (systemⅡ), and this study has been never reported. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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