Fabrication and Investigation on the Application of Ni-Si-Ge Nanocrystals for Nonvolatile Memory
| Autor: | 江成能 |
|---|---|
| Rok vydání: | 2008 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 96 In a conventional nonvolatile memory (NVM), charge is stored in a ploy-silicon floating gate (FG) surrounded by dielectrics. But, it will suffer some limitations for continued scaling of the device structure. Therefore, the nanocrystal nonvolatile memory devices have been investigated to overcome the limit of the conventional floating gate NVM in recently years. Nanocrystal charge storage offers several advantages, the main one being the potential to use thinner tunnel oxide without sacrificing nonvolatility. This is a quite attractive proposition since reducing the tunnel oxide thickness is a key to lowering operating voltage and/or increasing operating speeds. Among the reported research, several kinds of nanodots have been studied such as Si, Ge, Co and Ni. Finding an adaptable material to satisfy the requirement is a major subject for current nonvolatile memory industry. Semiconductor nanodots are compatible material for the current semiconductor industry. However, metal nanodots are beneficial in variable work function, higher density of states around the Fermi level. Also, the metallic nanodots are considered as promising material due to the better thermal stability and the advantage of metal nanodots. Several reported researches indicate that nickel silicon germanium (Ni-Si-Ge) alloy has potential for the contact material of SiGe based devices. According the study, Ni-Si-Ge alloy can be formed steadily for the characteristics of low resistivity and well thermal stability. In this letter, using Ni-Si-Ge nanodots as distributed charge storage elements was investigated. Also, the carrier gas, such as O2 and N2, were also added as the Nickel Germanium silicide in RTA. The memory effect and the electrical reliability for NiSiGe nanocrystals surrounded in different dielectric were also investigated in this study. Temperature & pre-capped oxide are very important issue to accumulate our nanodots. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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