Silicon Waveguide Modulators Incorporating the Hybrid Structures of Junction Field-Effect Transistors (JFET) and p-i-n Diodes
| Autor: | Chih-Chieh Cheng, 鄭致杰 |
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| Rok vydání: | 2008 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 96 We have fabricated and characterized a Si-based optical waveguide modulator working at the wavelength of 1.55 μm. It consists of a joint version of JFET and p-i-n diode structures integrated with a silicon rib waveguide on epitaxial Si wafers. Besides, the optical modulation mechanism was achieved via free carrier dispersion effect. Above all, the waveguide modulator successfully integrates the functions of optical and electronic devices altogether in a silicon substrate. The spin-on-dopant (SOD) method was utilized to define the p- and n-doped regions. The results of our experiments revealed that the devices present transistor characteristics. According to CCD images, we can observe that the light is absorbed by the plasma sitting within the optical channel. The device exhibits both the static and dynamic modulation depth of ~100% at the chosen driving conditions. In addition, a modulation depth above 95% was observed for modulation frequency up to 5 kHz. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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