High quality ZnO films prepared by ALD at low temperatures using DEZn and nitrous oxide
Autor: | Ping-Han Chung, 鍾秉翰 |
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Rok vydání: | 2008 |
Druh dokumentu: | 學位論文 ; thesis |
Popis: | 96 In this thesis, low temperature (LT) zinc oxide (ZnO) films were prepared on c – plane sapphire substrates to explore the effect of buffer – layer annealing on the characteristic of the films. Atomic layer deposition (ALD) was employed to grow ZnO films using diethylzinc (DEZn) and nitrous oxide (N2O). It was found that a LT – ZnO buffer layer having certein thickness annealed at an elevated temperature was beneficial to enable the realization of the high quality LT – ZnO films deposited subsequently. A self – limiting process window was observed in a range of DEZn admittance from 5.7 to 8.7 μmole/min. ZnO films grown at the self – limiting regime all show very good thickness uniformity. The monolayer – by – monolayer deposition nature along with buffer – layer annealing treatment allow to improve the structural, optical and electrical characteristics of the ALD – grown LT – ZnO films, post – annealing treatment under nitrogen (N2) ambient was also found to help achieving good properties of the ZnO films . |
Databáze: | Networked Digital Library of Theses & Dissertations |
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