Study on the Properties of Wide Band Gap Transparent Conducting MgZnO:Al Thin Films
Autor: | Chen, Wei-Siang, 陳偉祥 |
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Rok vydání: | 2008 |
Druh dokumentu: | 學位論文 ; thesis |
Popis: | 96 In this study high energy band gap MgZnO:Al thin films were deposited by sol-gel method. The effects of aluminum concentration, magnesium concentration and thermal treatment conditions on the electrical and optical properties of MgZnO:Al thin films were discussed. The electrical properties of MgZnO:Al thin films were analyzed by a four-point probe method and Hall effect measurement. The optical properties were tested by Ultraviolet Visible Spectrometer(UV-Vis). According to the results of experiments, the average values of the transmittance in the visible light region are about 90% for all of the samples. However, the resistivity of AZO thin film sintered in horizontal furnace for 1 hr is too large to be measured by Hall effect measurement. The resistivity of AZO thin film decreases greatly after heat treated in vacuum atmosphere for 10 min at 5500C by RTA. The resistivity of AZO thin film increases with the increasing of Al concentration. The AZO thin films with 1 mol.% Al has a minimum resistivity of 8.15×10-3 Ω-cm. The carrier concentration is 1.61×1020 cm-3 and the mobility is 4.73 cm2/v-s. To increase the energy band gap of AZO thin film, MgZnO:Al thin films with 1mol.% Al were deposited. The resistivity of MgZnO:Al thin film increases with the increasing of Mg concentration. The MgZnO:Al thin film with 15 mol.% Mg has a highest resistivity of 1.08×10-1 Ω-cm. The energy band gap increases from 3.33 to 3.55 eV when the Mg concentration increases from 0 mol.% to 15 mol.%. |
Databáze: | Networked Digital Library of Theses & Dissertations |
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