Fabrication and analysis of InGaAs solar cell device
| Autor: | Jian-Liang Pan, 潘建良 |
|---|---|
| Rok vydání: | 2007 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 95 The subject of this thesis is the device fabrication and performance analysis of InGaAs solar cell. Due to high surface recombination velocity of a small band gap of InGaAs layer, using a wide band gap InP window layer grown upon InGaAs layer to reduce the surface recombination. By using Transmission Line Model (TLM) to investigate the ohmic contact of electrode metal and InP semiconductor. We got a low specific contact resistively (ρc) of 2.24×10-5 Ω-cm2 of the AuBe/Cr/Au contact to p-InP. So, the process of manufacturing the front electrode of InGaAs solar cell by using AuBe/Cr/Au (type-I) for an ohmic contact to the p-type InP window layer. In additional, we also investigated the InGaAs solar cell with an InP window layer by using Ti/Pt/Au (type-II) as the front electrode directly contact to P+ -InGaAs emitter layer. Two types of InGaAs solar cell structures have been designed and we compared the results of two different processes. The corresponding open-circuir voltage, short-circuit current, fill factor and conversion efficiency of type-I cell and type-II cell are 0.342 V、4.32 mA、0.584、6.01%, 0.24 V、4.56 mA、0.647、4.9%, respectively. An increase of 42.5% in open-circuit voltage for type one is observed. As a result, the efficiency of the type-I cell is higher than that of the type-II cell by 22.65%. The series resistance (Rs), the ideality factor (n) and the reverse saturation current (Io) of both cells have been estimated. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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