Fabrication of Surface Acoustic Wave Filter by UV Nano-Imprint Technology
| Autor: | Nian-Huei Chen, 陳念暉 |
|---|---|
| Rok vydání: | 2007 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 95 Surface acoustic wave (SAW) filters are widely used in instruments of mobile communication and ratio frequency identification (RFID) because they have the advantages of small size, light weight, and compatible with IC process. For RFID used in electric toll collection system in highway requires operating central frequency as high as 5.8GHz. The width of the designed IDT finger must be less than 1 μm to yield a high working frequency in the GHz range. For conventional e-beam writing, it is time-consuming and costly to fabricate sub-micron IDT fingers. This research is focused on the development of fast and cheap UV nanoimorint technique for the fabrication of high-frequency surface acoustic wave (SAW) filters. For SAW filter fabrication, we first develop process technique. It divided into four parts. First of all is HSQ template fabrication. We utilized e-beam direct writing with low dose (360�媴/cm2) to define patterns. The line patterns were designed with width 100nm in width / space =1：1. A post-expose bake temperature (2000C ~2800C) for 2 minutes was carried out after e-beam exposure. Then HSQ were developed in TMAH solution with concentration 25%, TMAH temperature (R.T.~450C) for developing time 10 seconds. The high aspect ratio of 3.1 and width 100nm HSQ template for UV-NIL was obtained. For the second part, the above fabricated HSQ template was pretreated by an anti-sticking layer (F13-TCS) to prevent the template from adhering to the imprint pattern during the nanoimprint process. We succeed in transferring patterns on PAK-01-200 with low pressure 15psi at room temperature. High replication fidelity by UV imprint is demonstrated by SEM images. Furthermore, we use oxygen RIE to remove residual layer and successfully fabricating aluminum dense nanowire with width 100nm and thickness 29, 56, 101 and 186nm by lift-off process. For the forth part, electrode pad is aligned with IDT by optical lithography. Then, we use network analyzer to measure S parameter of SAW filter. SAW filter with width 200, 150nm for central frequency 4.3, 5.67GHz and insertion loss 11.9, 19.8dB are successfully fabricated. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
|