Study of Ohmic Contact to p-type AlGaN
| Autor: | Yan-Wei Chen, 陳彥偉 |
|---|---|
| Rok vydání: | 2006 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 95 Gallium nitride (GaN)-based semiconductor materials have been successfully applied to optoelectronic devices such as light-emitting diodes (LEDs) and laser diodes (LDs) for display and data storage in the blue wavelength region. There are numerous challenges in forming high-quality ohmic contacts to GaN-based materials, which are crucial for improving the electrical and optical performances in the devices. In general, however, fabricating low-resistance ohmic contacts is difficult in the case of p-type GaN due to the absence of metals having a work function larger than that of p-GaN and the difficulty in increasing near-surface hole concentrations. The research on next-generation LED and high-power LD optoelectronic devices in the ultraviolet (UV) wavelength region below 350 nm has become interesting. In this study, we demonstrated Ohmic contacts to p-type AlGaN using Mg-doped GaN and InGaN as a contact layer. Hope to Utilizing a strained-contact layer to bend band at the surface to enhanced tunneling transport. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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