Investigation and Fabrication of Double-Heterojuction Metal-Oxide-Semiconductor FETs Using Photoelectrochemical oxide Method
| Autor: | Jiang-Liang Lu, 呂建良 |
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| Rok vydání: | 2007 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 95 An oxide layer with low interface trap density has been grew on AlGaN directly by PEC method and applied on metal-oxide-semiconductor field effect transistor. The growth rate is about 3 nm/min in H3PO4 electrolytic solution with pH value of 3.5 and biased at 1 V using PEC oxidation method at room temperature. The deposited metal of ohmic contact are Ti/Al/Pt/Au(25/100/50/200nm), and the specific contact resistance is 7.62×10－6 Ω-cm2. AlGaN is etched by using reactant ion etch system with reactant gas BCl3 in mesa processing, and then deposited SiO2 as isolation by using PECVD. The length and width of MOS-HEMTs is 3 um and 300 um. When VGS=－1 volt and VDS=10 volt, The largest transconductance is 53.8 mS/mm and Drain-Source saturation current ID(sat) is about 167 mA/mm. Then, The characteristic of AlGaN/GaN/AlGaN MOS-HEMTs and HEMTs is compared and the lower leakage current, larger gate swing voltage is observed from MOS-HEMTs. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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