Improved MHEMT characteristics by ozone water oxidation
| Autor: | Yuan-Cheng Yang, 楊淵丞 |
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| Rok vydání: | 2007 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 95 Direct oxidation by using ozone water treatment was operated at room-temperature, atmospheric pressure and low-cost equipment are demonstrated in this thesis. Ozone water process presents a high growth rate, high quality nm-thickness insulating layer, low interface state density and smooth oxide film on InAlAs layer. Surface roughness of the oxidation layer was measured by AFM and SEM. In addition, a lattice matched InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) with a thin InAlAs native oxide layer has been made. Due to the high quality and uniform oxidation film, the maximum extrinsic transconductance (gm max) 390 mS/mm at VDS = 2 V, gate voltage swing (GVS) is about 0.8 V. The breakdown voltage (VGD) approach -14.8 V and the output power performance is 17.84 dBm due to its higher barrier potential of gate oxide layer to suppressed the kink effect, lower gate leakage current and enhance power performance. The gate dimension and the drain-to-source spacing are 1.2 × 200 um2 and 7 um, respectively. Consequently, the MOS-MHEMT can fulfill the requirement of wide range of gate-voltage operation and high-power application at the same time. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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