Photon-induced dissociation of CF2Cl2 adsorbed on Si(111)- 7×7 studied by valence–level photoemission spectroscopy
| Autor: | Keng-Ying Liao, 廖耕潁 |
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| Rok vydání: | 2007 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 95 In order to study the photon induced reactions of CF2Cl2 adsorbed on Si (111)-7×7 at 30 K, monochromatic synchrotron radiation was used as the light source for measuring the photoelectron spectra. We present an analysis of the dissociation and bonding’s decay of CF2Cl2 adsorbed on Si surface using various photons (hν=80、98、101、110 and 120 eV). The valence-level PES spectra show that CF2Cl2 molecules physisorb on Si (111)-7×7 surface, and have high photolysis cross section. After high photon exposure the SiF、SiC and SiCl fragments are created on the Si surface, which show the peaks at -10 、-7.7 and -6 eV, respectively. The photolysis cross section as a function of various incident photon energy in the range of 80-120 eV shows a threshold at around 100 eV. comparing with the total electron yield (TEY) spectrum of the clean sislcon substrate, we found that the dissociation of CF2Cl2 was mainy due to the dissociative attachment (DA) and dipolar dissociation (DD) . |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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