The Study on the Morphology and Wetting of the Silicon Oxide Films on Glass and PET by RF Magnetron Sputtering

Autor: Hsueh-Fen Yuan, 袁雪芬
Rok vydání: 2007
Druh dokumentu: 學位論文 ; thesis
Popis: 95
The SiOx film has good optical transparent, thermal stability, thermal conductivity, chemical inertness, electric insulate, diffuse insulate and harmless to human. Therefore, it is widely used in electric, photoelectric and food packing industries. There are different methods to prepare SiOx film, and different substrates in various applications. Though there are many publications concerning the preparation of SiOx films, much less evidence in comparison of SiOx films on two different kinds of substrates has been given. In this study, SiOx films were deposited on PET and glass substrates by means of Radio frequency (RF) magnetron sputtering. Process parameters including RF power and working pressure were varied. The effects of these parameters on the morphology, microstructure, composition and wetting were discussed. The results showed that the RF power has an obvious effect. At lower RF power, more voids are observed in the SiOx films deposited on PET rather than glass due to the different surface energy. The contact angle is the lowest at the power of 200 W for both PET and glass samples. It is 6.3° for PET samples and 8.6° for glass sample, respectively. As the working pressure change, the microstructure of SiOx films on PET and glass substrates does not change much. However, the contact angle decreases as the working pressure increases. The lowest value is 0° for PET substrates and 3.7° for glass at working pressure of 6 mTorr. With a simple model proposed in this study, the contact angles we calculated agree well with those measured values in dependence of the RF power. On the contrary, the calculated values do not fit those measured values in relation to the working pressure. The surface energy may affect the final result.
Databáze: Networked Digital Library of Theses & Dissertations
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