Thermal stability of Zn-doped ITO films prepared by rf magnetron cosputtering system
| Autor: | Chun-Hsing Lin, 林俊興 |
|---|---|
| Rok vydání: | 2006 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 94 Indium zinc oxide (IZO) thin films at various atomic ratios [Zn / (Zn + In) at.%] were prepared by rf cosputtering system at room temperature using indium tin oxide (ITO) and zinc oxide (ZnO) targets. The thermal stability of ITO and cosputtered films annealed under reducing atmosphere (forming gas 95% Ar + 5% H2) oxygen, and atmosphere ambient were investigated. The film resistivity of ITO and IZO films at lower atomic ratios was drastically increased at an annealing temperature of 700℃. The appearance of the metal-like In phase was responsible for the significantly increase in the film resistivity. In contrast, the film resistivity of IZO films at higher atomic ratios was stable at elevated annealing temperatures. The related thermal stability was attributed to the crystallization of ZnkIn2O3+k compounds and sequentially suppressed the formation of the metal-like In phase. The thermal degradation mechanism of IZO films annealed under oxygen and atmosphere ambient was concluded to be the oxygen atoms attracted by zinc atoms due to their higher oxidation potential. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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