Evaluation of Ternary Alloy TaCoN Thin Films Deposited by Reactive Sputtering for Copper Metallization
| Autor: | Ming-Li Ker, 柯銘禮 |
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| Rok vydání: | 2006 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 94 Thin-film properties and diffusion barrier characteristics of TaCoN films on silicon substrate prepared by a dc reactive magnetron sputtering at different nitrogen partial pressures are investigated. This work examines the sputtering nitrogen partial pressure impact on thermal stability, crystal structure, surface morphology and electrical properties of the films using x-ray diffractometry, electron microscopy and four-point probe measurement after rapid thermal annealing the deposited films at an elevated temperature. The findings indicate that the as-deposited TaCoN films exhibit an amorphous structure. The lowest electrical resistivity is 183.5 μΩ-cm for TaCo (77.8:22.2) films. The Si/TaCoN (1 sccm)/Cu exhibits a better thermal stability up to an annealing temperature of 750oC. The increasing in nitrogen partial pressure during deposition enhances the reaction between cobalt and nitrogen by forming CoN phase at a relative low temperature. The increase in nitrogen partial pressure during sputtering induces a lower conductivity and a lower crystallization temperature of the films, and therefore reduces the failure temperature on copper metallization. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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