Autor:	Guo-zhao Chen, 陳國照
Rok vydání:	2005
Druh dokumentu:	學位論文 ; thesis
Popis:	93 We have successfully used heat retaining layer enhanced crystallization technology when excimer laser annealing we can achieve that the fully lateral grain growth silicon island of 14um long. Then we combine the fully lateral grain growth silicon island and dual gate structure to make high performance thin film transistor. In addition, we have successfully developmental a machine that has hydrogenate impression on TFT without RF generator —《HOT-WIRE HYDROGENATOR》. We used the best hydrogenated parameter to hydrogenate metal-oxide-semiconductor device. Then we not only clearly reduce the density of interface state but also improve ON/OFF current ratio and subthreshold swing.
Databáze:	Networked Digital Library of Theses & Dissertations
Externí odkaz:	http://ndltd.ncl.edu.tw/handle/88292433798810962699 Zobrazit plný text záznamu