Analysis of the Capacitance Behavior of Narrow-Channel FD SOI NMOS Device Considering the 3D Fringing Capacitances Using 3-D Simulation
| Autor: | Jian-Zhong Chen, 陳建中 |
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| Rok vydání: | 2006 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 94 This thesis reports the analysis of the Gate-Source/Drain and Source/Drain-Gate capacitance behavior of narrow channel FD SOI NMOS Device considering the fringing capacitance. The first chapter introduces the characteristic of the SOI Device and the Mesa Isolation SOI Device. Moreover, we also account for the impact of Fringing Electric Field Effect on the Small- Geometry SOI Device. The second chapter compares the impact on the total capacitance behavior of different channel width SOI Device due to the Fringing Capacitance Effect .we also compute out the percentage contribution of the fringing capacitance on the total capacitance. Above all, we simulate out the relationship of fringing capacitance and channel width to understand the accidence of the fringing capacitance on the different channel width. The third chapter compares the Mesa Isolation SOI Device which uses or not uses Lightly-Doped-Drain on the analysis of DC characteristic and the Gate-Source/Drain capacitance behavior affected by the fringing capacitance. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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