Analysis of silicon thin film and fabrication of heterostructure thin film solar cell
| Autor: | Li-Guo Wu, 吳立國 |
|---|---|
| Rok vydání: | 2006 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 94 Research work, we grew the silicon thin films with different hydrogen dilution ratio by electron cyclotron resonance chemical vapor deposition (ECR-CVD). The crystalline fraction, bonding configurations, crystalline orientation and grain size, film thickness, dark and light conductivities of the silicon thin films were measured and analyzed by the Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), X-ray Diffraction (XRD), α-STEP and I-V measurement respectively. In the experiment, we fixed the substrate temperature at 250oC, the process pressure at 20mtorr, the microwave power at 1150W, the Top/ Middle/ Bottom magnetic current at 170/170/30A and varied the hydrogen dilution ratio from 40% to 98%. Beside, we also doped the films using phosphine (PH3) and diborance(B2H6) to form the n-type and p-type silicon thin film. The four point probe was used to analyze the resistivity. From the experimental results, we find the fact that the maximum grain size was found to be about 251Ǻ and the maximum crystalline fraction was about 91% when the hydrogen dilution ratio was 92%. AFORE-HET was used to simulate the optimum thickness of the device structure and followd the simulated result to fabricate the silicon thin film solar cell. The P-type amorphous silicon was used as a window layer and microcrystalline silicon as I and N layer. From I-V characteristics of the device, the open circuit voltage obtained is 0.112mA/cm2, the short circuit current is 0.4V and the fill factor is 21.35%. The device characteristics can be improved by improving the quality of the material. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
|