Ge floating dot memory
| Autor: | Jung-Hsiuan Wu, 吳榮軒 |
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| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 94 In this thesis, we utilize the method of thermal oxidation poly SiGe to form Ge nanocrystals and then fabricate the Ge nanocrystals transistor. In the process of fabrication, we have also developed the undestructive method to check surface state of the sample by Ellipsometer. Besides, the gate etching in formation of Ge nanocrystals transistor is very important. Because removing Ge nanocrystals embedded in gate stacked greatly effects the following fabrication and characteristics of device. We have fabricated Ge nanocrystals MOS capacitors and FET by using the method of thermal oxidation poly SiGe to form Ge nanocrystals. After formation, we take some measurements included capacitance measurement, Retention time measurement, pulse width measurement and endurance measurement. According to the result of measurements we can easily realize the characteristics of our device and the problems of device structure. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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