Investigation on Thin-Film-Transistors with a Transparent Material Zinc-Oxide Layer
| Autor: | Yi-Teh Chou, 鄒一德 |
|---|---|
| Rok vydání: | 2006 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 94 In this thesis, we have successfully developed a transparent thin film transistors (TTFT) using a novel material Zinc Oxide (ZnO) as semiconductor layer, with high carrier mobility and optical transparency. The use of ZnO-based material can increases the field-effect mobility of TFT devices, the aperture of AMLCD panel and releases the issue of photo-excited leakage current. In this work the ZnO film was deposited on a silicon substrate by sputtering Zinc metal target in DC glow discharge plasma of an argon/oxygen mixture. We changed the power of DC sputter to adjust the uniformity of the ZnO film. Also, the conductivity and carrier concentration were controlled by adjusting the flux of the mixture oxygen during film deposition and thermal annealing temperatures. An optimal ZnO film deposition condition was finally established at room temperature for the ZnO TFTs. The benefit of using the DC sputter system possesses the feasibility and varieties to easily adjusting the optimal rate of Zn/ZnO mixture, Zn1+xO, and ZnO for TFTs. Several material analysis techniques, such as FTIR, XRD, and etc. were utilized to discussing the crystallization, grain size, and surface morphology of ZnO films. Electrical characteristics and conduction mechanisms of ZnO TTFT devices were also investigated by I-V characteristic analysis. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
| Externí odkaz: |
|