The study of ZnO based MIS(metal-insulator-semiconductor) Diode
| Autor: | Bo-Cheng Kung, 龔柏誠 |
|---|---|
| Rok vydání: | 2006 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 94 ZnO is a wide band-gap semiconductor and it has larger Exciton binding energy at room temperature. So, it provides another choice in optoelectronic applications. Because of the difficulty in making p-type ZnO, we use MIS structure instead of p-n junction structure. We also use easier method for making our insulator layer. We use Sapphire substrate and ZnO thin film was grown by RF Sputter. Then, we immerse our sample in hydrogen peroxide to be an insulator layer. The third step, Gold Schottky contact was grown by thermal evaporation. A MIS structure is complete. Also, we use aluminum as an Ohmic contact. We can get its I-V curve by HP4156. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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