Autor:	Hsien-Hsun Yang, 楊弦勳
Rok vydání:	2006
Druh dokumentu:	學位論文 ; thesis
Popis:	94 We report an investigation on quantum interference of charge excitation in double-dot nanopillar transistor. Electrical transport measurements on the two closed coupled silicon dots with distinct critical length of 1.5nm and 3nm,for the first time, show full size beats in current-voltage (I-V) characteristics at 300K.Analysis of data based on electron charging suggests that the interference occurs at the state of n=1.We find that at large bias the excitation rises to a group of mixing states of n=2 and n=3.We propose an electron-mechanical coupling model to explain the results.
Databáze:	Networked Digital Library of Theses & Dissertations
Externí odkaz:	http://ndltd.ncl.edu.tw/handle/04066249181417679320 Zobrazit plný text záznamu