Increasing DRAM Capacitance by Improving HSG Process
| Autor: | I-Ling Huang, 黃伊伶 |
|---|---|
| Rok vydání: | 2006 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 94 It is great challenge to maintain and even to increase the capacitance of Dynamic Random Access Memory (DRAM) as the manufacturing technology of contracting the size of memory element is advancing. The capacitance may diminish proportionally to the decreasing of area per cell as a result of intensifying the density of memory. The Hemi-Spherical Grained Si (HSG) is one of the ways to raise the capacitance. Using LPCVD by conducting air at high temperature, the silicon atoms and amorphous silicon can be rearranged and become rough in the surface. The rough surface provides more area which can serve as the effective electrode of capacitor and hence increases the capacitance. However, the unalike grain sizes, which likely results in the irregular distribution of silicon atoms especially at the bottom of electrode of capacitor, is the choke point of HSG at present. The object of this thesis is to improve the capacitance of DRAM at HSG process by informing the distribution. It consists of two major subjects: researching into the parameters and properties of the producing process of HSG, and investigating the reasons of causing the irregular distribution at the bottom of capacitor. In addition, modify the irregular distribution of silicon atoms by designing and examining the experiments. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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